Now
LED chip manufacturers are making four kinds of LED blue chip processes:
Sapphire substrate GaN matrix LED This is a common method used by most wafer manufacturers. Although it is still improving the material growth and device fabrication level, the sapphire substrate is not conductive, the thermal conductivity is poor, the dicing is difficult, the antistatic force is poor, the flip chip bonding process is complicated, and the lateral resistance is Large, high current density, high operating voltage, wasting energy.
2. GaN substrate GaN matrix LED Since the substrate is electrically conductive and thermally conductive,
semiconductor lighting chips currently dominate, but their price is too high and dicing is difficult.
3. GaN substrate GaN matrix LED This process can be clearly mentioned in the quality of the epitaxial material, but the price is too high and the device processing is difficult.
4. Silicon wafer as GaN material substrate
This process enables the wafer to have good electrical conductivity, high crystal quality, large size and low cost, and easy processing. However, there is a huge lattice mismatch and thermal mismatch between the GaN epitaxial material and the silicon substrate, so the GaN material (small soup) of the device quality is rare on the silicon substrate.
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