Power cycle test booster IGBT performance improvement

Automotive power electronics components (such as IGBTs) must be designed to withstand thousands of hours of operating time and millions of power cycles while simultaneously withstanding temperatures up to 200 °C. Therefore, the reliability of the product is particularly critical, and at the same time the cost of failure can be a big problem. As the demand for energy in industrial electronic systems increases, the biggest challenge for suppliers of automotive power electronics and components is to provide systems that are more reliable for automotive OEMs.

With increasing energy load pressures, power electronics innovations have brought new technologies, such as the use of direct bonded copper substrates that increase thermal conductivity, superior interconnect technology (rough packaged bond wires, ribbon keys) And the solderless chip bonding technology is used to enhance the cycle capability of the module. These new substrates help to lower the temperature, the metal strip can carry more current, and the solderless chip paste can be sintered silver with a particularly low thermal resistance.

All technologies help to improve the heat transfer path in the assembly. However, thermal and thermomechanical stresses generated by power cycling processes and thermal effects can still cause system failure. These stresses can cause problems such as package bond line degradation, adhesive layer fatigue, stack delamination, and chip or substrate cracking.

The heat dissipation at the junction location is one of the main factors affecting the reliability of the IGBT chip, especially the bonding layer material of the chip. Power cycling testing is an ideal way to emulate the life cycle of a module, as the number of switching of IGBT modules can be predicted depending on the field of application.

This paper mainly describes the measurement research combined with power cycle test and thermal transient test. In this test, the power cycle test is mainly used to cause component failure, and thermal transient measurement is performed between different steady states to determine the IGBT sample. cause of issue. This type of test can properly assist in redesigning the physical structure of the module and, in addition, can simulate the input of thermomechanical stresses as required.

The main purpose of the test is to use a repeatable process to study the failure modes that are common in current IGBT modules. However, the number of these tests is not sufficient to predict the life of the product, but we can use this to understand and test the degradation process in the IGBT chip. We first performed a thermal transient test on the sample. The measurement showed that the time required for the component to be in the thermal transient test was 180 seconds. The component can reach the highest temperature when inputting 10A of drive current, and then switch to 100mA of sense current when starting measurement.

Figure 1 shows the basis for the calibration of the sample in the initial "healthy" form. The structure function is a thermal transient function in one-dimensional, longitudinal state. This curve and the corresponding heat transfer model. In many commonly used three-dimensional geometric structural functions, as a detailed numerical shape of the package structure, the structural function is a "substantial" one-dimensional heat transfer model, such as radial diffusion in a disk (one-dimensional flow in a polar coordinate system), Spherical diffusion, conical diffusion, etc.

Figure 1 Thermal transient response of an IGBT.

Therefore, the structure function can generally recognize the appearance/material parameters. The structure function can be obtained by direct conversion of the mathematical calculation of the heating or cooling curve. These curves can be obtained from actual measurements or by simulating heat transfer paths using detailed structural models.

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