Mitsubishi Electric develops subtle action industrial robots
The Mitsubishi Electric Advanced Technology R&D Center uses artificial intelligence (AI) to develop industrial robots that can be fine-tuned.
The assembly of electronic components requires the operation of skilled workers, but at this stage, there is a shortage of manpower. Therefore, the industry has begun to introduce industrial robots that can be precision-machined on such production lines.
The robot developed by Mitsubishi Electric's advanced technology has used the AI ​​algorithm to allow the robot to fine-tune it. It takes only 1.9 seconds per action time, even surpassing the skilled operator, and can perform automatic assembly work flexibly and quickly.
In the past, before industrial robots performed high-precision work, it was necessary to pause for a while to correct the influence of the external environment. Nowadays, the movement can be automatically adjusted without a pause. In the future, not only the electronic parts assembly line, but also the field of logistics and distribution can be further applied.
The Mitsubishi Electric Advanced Technology Institute was independently established in 1935 from Kobe Manufacturing Co., Ltd. The research scope covers space satellite control technology, environmental protection and research and development of new materials. In addition to the aforementioned industrial robots, the technology has recently begun to develop low-energy environmentally-friendly materials to represent power semiconductor components using silicon carbide (SiC) in response to increasing warming problems.
The SiC power semiconductor component of Mitsubishi Electric Advanced Technology Co., Ltd. changes the transistor structure in the component, and reduces the power consumption by 20%. It is the semiconductor with the lowest loss in the world, and a large current occurs when an abnormality occurs in the general SiC component. This component can be interrupted early in the event of an abnormality, avoiding malfunctions, and the goal is to enter the commercialization stage in 2020.
The Mitsubishi Electric Advanced Technology Institute is working with the research team of Professor Hiroyuki of the University of Tokyo to analyze three reasons that affect the resistance of SiC power semiconductors. Previous studies have suggested that the interface roughness of SiC is the main cause, but after research, the above factors are found. Only 6%, interface charge and atomic vibration have a greater impact, accounting for 43%, accounting for 51%.
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