Dry photo photoelectric LED capacity expansion to achieve 70% high growth
Main revenue and profit increased significantly
[High-tech LED News] In 2010, Ganzhao Optoelectronics realized operating income of RMB 297.13 million, operating profit of RMB 141.24 million and net profit of RMB 137.11 million, which increased by 54.39%, 61.68% and 63.09% respectively over the same period of last year. Achieve diluted earnings per share of 1.39 yuan.
In the 2010 fundraising project, Ganzhao Optoelectronics increased its investment in the production of high-brightness quaternary LED chips. By the end of 2010, the company had 10 MOCVD epitaxial furnaces, and LED chip production capacity increased by 64% year-on-year; The average period of installation and commissioning to achieve full production is 11.4 days, which is higher than the industry average.
The company continued to expand its existing capacity in 2011. At present, two production bases in Yangzhou and Xiamen have been formed. Among them, the Yangzhou subsidiary has successfully completed the overall industrial layout of the company and completed the construction of the Yangzhou fundraising project. By the end of 2011, there will be 20 MOCVD production scales. It plans to expand its production capacity from the current 18,000 pieces/year to 36,000 pieces/year in 2012. The Xiamen base is also actively promoting fundraising projects and is working to start production in 2012. In the next 2-3 years, the company is expected to maintain a growth rate of more than 50%.
In terms of yellow-green products, the company continued to strengthen R&D investment, and made yellow-green products and yellow-green and red-light combination products as the main products; the company has completed the R&D projects of the National Development and Reform Commission and the Ministry of Industry and Information Technology for high-brightness flip-chip LED epitaxial wafers and chips. High-power chips of 10, 14 and 40 mil were successfully developed and put into mass production. In 2011, the company will produce more than 28% space battery epitaxial wafers and chips with high conversion efficiency.
[High-tech LED News] In 2010, Ganzhao Optoelectronics realized operating income of RMB 297.13 million, operating profit of RMB 141.24 million and net profit of RMB 137.11 million, which increased by 54.39%, 61.68% and 63.09% respectively over the same period of last year. Achieve diluted earnings per share of 1.39 yuan.
In the 2010 fundraising project, Ganzhao Optoelectronics increased its investment in the production of high-brightness quaternary LED chips. By the end of 2010, the company had 10 MOCVD epitaxial furnaces, and LED chip production capacity increased by 64% year-on-year; The average period of installation and commissioning to achieve full production is 11.4 days, which is higher than the industry average.
The company continued to expand its existing capacity in 2011. At present, two production bases in Yangzhou and Xiamen have been formed. Among them, the Yangzhou subsidiary has successfully completed the overall industrial layout of the company and completed the construction of the Yangzhou fundraising project. By the end of 2011, there will be 20 MOCVD production scales. It plans to expand its production capacity from the current 18,000 pieces/year to 36,000 pieces/year in 2012. The Xiamen base is also actively promoting fundraising projects and is working to start production in 2012. In the next 2-3 years, the company is expected to maintain a growth rate of more than 50%.
Company LED chip production capacity, production forecast
In terms of yellow-green products, the company continued to strengthen R&D investment, and made yellow-green products and yellow-green and red-light combination products as the main products; the company has completed the R&D projects of the National Development and Reform Commission and the Ministry of Industry and Information Technology for high-brightness flip-chip LED epitaxial wafers and chips. High-power chips of 10, 14 and 40 mil were successfully developed and put into mass production. In 2011, the company will produce more than 28% space battery epitaxial wafers and chips with high conversion efficiency.
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