Foxconn's new technology improves the quantum efficiency of LED
Foxconn, an electronics manufacturer, has developed a nano-particle doped confining layer to make the lattice arrangement of indium gallium nitride (InGaN) and aluminum gallium arsenide (AlGaAs) active layers smoother and more ordered. This is used to increase the quantum efficiency of light-emitting diodes (LEDs). The application for this US patent will challenge the current process technology of LED chip factories.
Hon Hai Precision Industry Co., through its subsidiary Foxconn, is a foundry of international companies such as Nokia, Apple and D EL l. Foxconn is currently one of the world's largest electronics manufacturers, claiming that hydrogenated silicon carbide (hydrogenated SiC) as a substrate material for LEDs can effectively improve the heat dissipation of LED chips. They filed two applications for LED patents on May 28.
The two LED patents filed by the Taiwan-based company include the use of InGaN or AlGaAs as the active layer, single quantum well or multiple quantum well layers. The difference between Foxconn's LED and the general LED epitaxial structure is that the former is doped with nanoparticles of 20-200 nm in diameter in the localized layer on both sides of the active layer. The inventor, Ga-Lane Chen, is the chief technology officer of Hon Hai Group. He pointed out in the patent application that the nanoparticles incorporated may be silicon nitride (SiN), silicon oxide (SiO), gallium oxide (GaO). , gallium nitride (AlN) or boron nitride (BN), will help improve the quality of LED bare chip.
The patent states that nanoparticles can change the lattice constant of the n-type and p-type confinement layers, thereby reducing the lattice strain. By reducing strain, depositing an active layer on the n-type confinement layer and depositing a p-type confinement layer on the active layer, the opportunity for lattice dislocations can be reduced. In addition, the reduction in lattice strain also reduces the stress between the active layer and the confined layer, thereby improving quantum efficiency.
Hon Hai founded Foxsemicon Integrated Technology Inc. (FITI) in 2001 as a subsidiary specializing in the development of TFT-LCD, LED lighting and LED displays. Since 2006, Hon Hai Precision, Pei Xin Semiconductor and Foxconn have applied for some patents for LED chips in the United States.
Hon Hai Precision Industry Co., through its subsidiary Foxconn, is a foundry of international companies such as Nokia, Apple and D EL l. Foxconn is currently one of the world's largest electronics manufacturers, claiming that hydrogenated silicon carbide (hydrogenated SiC) as a substrate material for LEDs can effectively improve the heat dissipation of LED chips. They filed two applications for LED patents on May 28.
The two LED patents filed by the Taiwan-based company include the use of InGaN or AlGaAs as the active layer, single quantum well or multiple quantum well layers. The difference between Foxconn's LED and the general LED epitaxial structure is that the former is doped with nanoparticles of 20-200 nm in diameter in the localized layer on both sides of the active layer. The inventor, Ga-Lane Chen, is the chief technology officer of Hon Hai Group. He pointed out in the patent application that the nanoparticles incorporated may be silicon nitride (SiN), silicon oxide (SiO), gallium oxide (GaO). , gallium nitride (AlN) or boron nitride (BN), will help improve the quality of LED bare chip.
The patent states that nanoparticles can change the lattice constant of the n-type and p-type confinement layers, thereby reducing the lattice strain. By reducing strain, depositing an active layer on the n-type confinement layer and depositing a p-type confinement layer on the active layer, the opportunity for lattice dislocations can be reduced. In addition, the reduction in lattice strain also reduces the stress between the active layer and the confined layer, thereby improving quantum efficiency.
Hon Hai founded Foxsemicon Integrated Technology Inc. (FITI) in 2001 as a subsidiary specializing in the development of TFT-LCD, LED lighting and LED displays. Since 2006, Hon Hai Precision, Pei Xin Semiconductor and Foxconn have applied for some patents for LED chips in the United States.
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